dmp2225l p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) package i d t a = +25c -20v 110m ? @ v gs = -4.5v sot23 -2.6a 225m ? @ v gs = -2.5v -2.0a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? low on-resistance: ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin a nnealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information part number qualification case packaging dmp2225l -7 commercial sot-23 3000/tape & reel dmp2225lq -7 automotive sot-23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view top view d g s equivalent circuit source gate drain 2p2 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) 2p2 ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (note 5) stead state t a = +25c t a = +70c i d -2.6 -2 a pulsed drain current (note 6) i dm 8 a thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 1.08 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 115 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -800 na v ds = -20v, v gs = 0v on-state drain current i d(on) -6 ? ? a v ds -5v, v gs = -4.5v -3 ? ? v ds -5v, v gs = -2.5v gate-source leakage i gss ? ? 80 na v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.45 ? -1.25 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? 80 165 110 225 m ? v gs = -4.5v, i d = -2.6a v gs = -2.5v, i d = -2.0a forward transfer admittance |y fs | ? 4 ? s v ds = -5v, i d = -2.6a diode forward voltage (note 6) v sd ? ? -1.26 v v gs = 0v, i s = -2.6a dynamic characteristics input capacitance c iss ? 250 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 88 ? pf reverse transfer capacitance c rss ? 58 ? pf gate resistance r g ? 12 16 ? v gs = 0v, v ds = 0v, f = 1mhz total gate charge q g ? 4.3 5.3 nc v gs = -4.5v, v ds = -10v, i d = -2.7a gate-source charge q g s ? 0.9 ? gate-drain charge q g d ? 2.1 ? notes: 3. device mounted on fr-4 substrate pc boar d, 2oz copper, with minimum recommended pad layout. 4. repetitive rating, pulse width limited by junction temperature. 5. short duration pulse test used to minimize self-heating effect. dmp2225l product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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